19-05E

An influence of the induced by correlated hopping localization of itinerant electrons on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov–Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, the strong enhancement of the Seebeck coefficient is observed at low temperatures, when the flatted dependence is displays in a wide temperature range.