Title: The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation
Author(s):

	R.M. Peleshchak (Drohobych Ivan Franko State Pedagogical University, 24 Franko St., 82100 Drohobych, Ukraine) ,
	O.V. Kuzyk (Drohobych Ivan Franko State Pedagogical University, 24 Franko St., 82100 Drohobych, Ukraine) ,
	O.O. Dan'kiv (Drohobych Ivan Franko State Pedagogical University, 24 Franko St., 82100 Drohobych, Ukraine) ,
	S.K. Guba (Lviv National Polytechnic University, 12 Bandera St., 79013 Lviv, Ukraine)

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads to an increase or decrease of the critical temperature (the critical concentration of adatoms), at which the formation of self-organized nanostructure is possible. It is shown that in strongly alloyed n-GaAs semiconductor, an increase of the electric field strength leads to a monotonous change (decrease or increase depending on the direction of the electric field) of the period of self-organized surface nanostructures of adatoms.

Key words: nucleation, electric field, adatom, surface superlattice, diffusion, deformation
PACS: 81.07.Bc, 66.30.Lw

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