Title: Analysis of the effect of polarization traps and shallow impurities on the interlevel light absorption of quantum dots
Author(s):

	V.I. Boichuk (Department of Theoretical and Applied Physics, and Computer Simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Ukraine) ,
	R.Ya. Leshko (Department of Theoretical and Applied Physics, and Computer Simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Ukraine) ,
	D.S. Karpyn (Department of Theoretical and Applied Physics, and Computer Simulation, Ivan Franko Drohobych State Pedagogical University, 3 Stryiska St., 82100 Drohobych, Ukraine)

A spherical quantum dot (QD) heterosystem CdS/SiO₂ has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the difference between the QD and matrix dielectric permittivity. It has been defined that for small QD radii there are surface electron states. For different radii, partial contributions of the surface states into the electron energy caused by the electron-ion and electron-polarization charges interaction have been defined. The linear light absorption coefficient of noninteracting QDs has been calculated taking into account the QD dispersion by the size. It is shown that the surface states can be observed into different ranges of an electromagnetic spectrum.

Key words: absorption coefficient, donor impurity, polarization trap
PACS: 73.21.La, 78.20.Ci

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