DOI:10.5488/CMP.17.23704 arXiv:1407.2431
Title:
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
Author(s):
| M.V. Tkach (Chernivtsi National University, 2 Kotsubynsky St., 58012 Chernivtsi, Ukraine) , | |
| Ju.O. Seti (Chernivtsi National University, 2 Kotsubynsky St., 58012 Chernivtsi, Ukraine) , | |
| Y.B. Grynyshyn (Chernivtsi National University, 2 Kotsubynsky St., 58012 Chernivtsi, Ukraine) , | |
| O.M. Voitsekhivska (Chernivtsi National University, 2 Kotsubynsky St., 58012 Chernivtsi, Ukraine) |
The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa1-xAs which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure.
Key words:
resonant tunneling nano-structure, interface phonons, quantum cascade detector
PACS:
78.67.De, 63.20.Kr, 72.10.Di
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