Title: Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
Author(s):

	V.I. Boichuk (Ivan Franko Drohobych State Pedagogical University, Theoretical Physics Department, 3 Stryiska St., 82100 Drohobych, Ukraine) ,
	I.V. Bilynskyi (Ivan Franko Drohobych State Pedagogical University, Theoretical Physics Department, 3 Stryiska St., 82100 Drohobych, Ukraine) ,
	O.A. Sokolnyk (Ivan Franko Drohobych State Pedagogical University, Theoretical Physics Department, 3 Stryiska St., 82100 Drohobych, Ukraine) ,
	I.O. Shakleina (Ivan Franko Drohobych State Pedagogical University, Theoretical Physics Department, 3 Stryiska St., 82100 Drohobych, Ukraine)

The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix. Calculations have been carried out in perturbation theory taking into account the hybridization of states for cubic, ellipsoidal, cylindrical and tetrahedral shapes by changing the volume of a quantum dot. Based on the energy calculations and on the determined wave functions of the hole states we have defined the selection rules and the dependence of the interlevel hole absorption coefficient on QD shapes and volumes.

Key words: multiband approximation, optical transitions, oscillator strength, absorption coefficient
PACS: 71.15.-m, 78.20.Ci, 78.67.Hc

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