Title: Effect of pressure on the electronic structure of hcp Titanium
Author(s):

	M. Jafari (Physics Department, K.N. Toosi University of Technology, Tehran, Iran) ,
	A. Jahandoost (Physics Department, K.N. Toosi University of Technology, Tehran, Iran) ,
	M. Vaezzadeh (Physics Department, K.N. Toosi University of Technology, Tehran, Iran) ,
	N. Zarifi (Physics Department, K.N. Toosi University of Technology, Tehran, Iran)

The effect of pressure on the hexagonal close-packed structure of titanium is investigated. The lattice parameters of the equilibrium structure were determined in terms of the Gibbs free energy using the Epitaxial Bain Path method. When this process was repeated for several pressures, the effect of pressure on the lattice parameters was revealed. The calculated lattice parameters were in good agreement with the experimental and theoretical results. The effects of pressure on parameters depending on the electronic structure such as conductivity and resistivity in the ground state were also investigated up to 30 GPa using density functional theory.

Key words: effect of pressure, hcp-Ti, Gibbs free energy, lattice parameters, EBP method
PACS: 61.50.Ks, 05.70.Ce, 72.15.Eb, 71.15.Mb

Full text [pdf, ps]

<< List of papers