Title: Electric properties of the interface quantum dot -- matrix
Author(s):

	R.M. Peleshchak (Drohobych Ivan Franko state pedagogical University, 82100 Drohobych, 24 I.Franko Str., Ukraine) ,
	I.Ya. Bachynsky (Drohobych Ivan Franko state pedagogical University, 82100 Drohobych, 24 I.Franko Str., Ukraine)

A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n⁺- n junction.

Key words: quantum dots, electron-deformation and electrostatic potentials
PACS: 68.65.Hb, 73.21.La, 73.63.Kv
Comments: Figs. 4, Refs. 16, Tabs. 0

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