Title: Enhanced phenomenological models of ion channeling contribution to doping profiles in crystals
Author(s):

	M.I. Bratchenko (National Scientific Center "Kharkiv Institute of Physics and Technology", 1 Akademicheskaya Str., 61108, Kharkiv, Ukraine) ,
	S.V. Dyuldya (National Scientific Center "Kharkiv Institute of Physics and Technology", 1 Akademicheskaya Str., 61108, Kharkiv, Ukraine) ,
	A.S. Bakai (National Scientific Center "Kharkiv Institute of Physics and Technology", 1 Akademicheskaya Str., 61108, Kharkiv, Ukraine)

New phenomenological models are proposed to describe the effect of an ordered lattice structure of crystalline targets on the as-implanted doping profiles of low-energy heavy ions. The models account for the channeling kinetics and clarify the effect of bi-directional transitions of ions between random-like and channeled modes of motion on the target depth dependencies of dopant concentration. They also incorporate a simple model of the target radiation damaging effect on doping profiles. The presented results of model validation against the experimental and Monte Carlo computer simulation data and the comparative analysis of the capabilities of the proposed and the existing models show that the application of a more physically grounded approach allows us to improve the quality of doping profile description. The theoretical models developed are useful for obtaining physical parameters of low-energy ion channeling kinetics from the experimental data.

Key words: ion implantation, doping profile, crystals, channeling, kinetics
PACS: 61.72.Tt, 85.40.Ry, 61.85.+p, 02.70.Uu
Comments: Figs. 6, Refs. 44, Tabs. 0

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