Title: Mapping between two models of etching process
Author(s):

	T.Patsahan (Institute for Condensed Matter Physics, National Academy of Sciences of Ukraine, 1 Svientsitskii str., 79011 Lviv, Ukraine) ,
	A.Taleb (aboratoire d'Electrochimie et Chimie Analytique, ENSCP et Université P. et M. Curie, UMR 7575, 4 Place Jussieu, 75005 Paris, France) ,
	J.Stafiej (Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland) ,
	J.-P.Badiali (aboratoire d'Electrochimie et Chimie Analytique, ENSCP et Université P. et M. Curie, UMR 7575, 4 Place Jussieu, 75005 Paris, France)

We consider two models for the etching processes using numerical simulations based on cellular-automata discrete-lattice approach. In the first model we use a uniform etching probability for each surface site. In the second model the etching probability at a given site depends on the local environment of this site. In contrast to the first model we have now a non-local description of the surface evolution. It is natural to consider the following question: is this non-locality sufficient to induce new physics? To answer this question is the main goal of the paper. We show that there exists an equivalence between the two models. This means that the non-local model gives results similar to the local one provided we use an effective value of the etching probability.

Key words: surface growth, etching, mean field description
PACS: 81.65.Cf, 05.40.-a, 68.35.Ct

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