Title: Magnetic field dependence of conductivity and effective mass of carriers in a model of Mott-Hubbard material
Author(s):

	L.Didukh (Ternopil State Technical University, Department of Physics, 56 Rus'ka Str., 46001 Ternopil, Ukraine) ,
	O.Kramar (Ternopil State Technical University, Department of Physics, 56 Rus'ka Str., 46001 Ternopil, Ukraine) ,
	Yu.Skorenkyy (Ternopil State Technical University, Department of Physics, 56 Rus'ka Str., 46001 Ternopil, Ukraine) ,
	Yu.Dovhopyaty (Ternopil State Technical University, Department of Physics, 56 Rus'ka Str., 46001 Ternopil, Ukraine) ,

The effect of external magnetic field h on a static conductivity of Mott-Hubbard material which is described by the model with correlated hopping of electrons has been investigated. By means of canonical transformation, the effective Hamiltonian is obtained which takes into account strong intra-site Coulomb repulsion and correlated hopping. Using a variant of generalized Hartree-Fock approximation the single-electron Green function and quasiparticle energy spectrum of the model have been calculated. The static conductivity σ has been calculated as a function of h, electron concentration n and temperature T. The correlated hopping is shown to cause the electron-hole asymmetry of transport properties of narrow band materials.

Key words: Mott-Hubbard material, conductivity, magnetic field
PACS: 72.15.-v, 72.80.Ga