Title: CONDUCTIVITY OF THE Bi_{12}SiO_{20} THIN FILMS
Author(s): S.N.Plyaka, G.Ch.Sokolyanskii, E.O.Klebanskii, L.Ja.Sadovskaya (Dnipropetrovsk State University, 20 Kazakova Str., 320625 Dnipropetrovsk, Ukraine)

The results of the conductivity examination in the Bi$_{12}$SiO$_{20}$ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300-550 K temperature and up to 100 V/cm field ranges. It was observed that the charge carrier transfer at the flow level, situated in the tail of the density of states into the forbidden band is dominant for the investigated sample at $T$ $>$ 500 K. The obtained results are explained in terms of the highly compensated doped semiconductor model.

Comments: Figs. 3, Refs. 6, Tabs. 0.