Condensed Matter Physics, 1998, vol. 1, No 1(13), p. 113-124, English
DOI:10.5488/CMP.1.1.113


Title:ON TEMPERATURE VERSUS DOPING PHASE DIAGRAM OF HIGH CRITICAL TEMPERATURE SUPERCONDUCTORS
Authors:V.M.Loktev (Bogolyubov Institute for Theoretical Physics of the National Academy of Sciences of Ukraine, 14-b Metrologichna St. UA-252143 Kyiv, Ukraine), V.M.Turkowski (Shevchenko Kyiv University, 6 Acad. Glushkova Av., UA-252127 Kyiv, Ukraine)

An attempt to describe the bell-shape dependence of the critical temperature of high-Tc superconductors on the charge carrier density is made. It is proposed to explain its linear increase in the region of small densities (underdoped regime) by the role of the order parameter phase 2D fluctuations which become less at this density growth. The critical temperature suppression in the region of large carrier densities (overdoped regime) is connected with the appearance (because of doping) of an essential damping of long-wave bosons which, within the framework of the model proposed, define the mechanism of indirect inter-fermion attraction.

Key words: high-temperature superconductors, doping, critical temperature, phase diagram, pseudogap
Comments: Figs. 1, Refs. 29, Tabs. 0.


[ps,pdf] << Contents of Vol.1 No.1(13)