Title: Thermoelectric properties of Mott insulator with correlated hopping at microdoping
Author(s):

	D.A. Dobushovskyi (Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine, 1 Svientsitskii St., 79011 Lviv, Ukraine) ,
	A.M. Shvaika (Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine, 1 Svientsitskii St., 79011 Lviv, Ukraine)

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, a strong enhancement of the Seebeck coefficient is observed at low temperatures, when the flattened dependence is displayed in a wide temperature range.

Key words: thermoelectric effects, Mott insulators, localization, Falicov-Kimball model, correlated hopping, dynamical mean field theory

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