Title: DISLOCATION NONLINEAR DYNAMICS AND CRYSTAL SONOLUMINESCENCE
Authors: Ju.M.Khalack (Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, 14-b Metrologichna St., Kyiv 252143, Ukraine; T.Shevchenko Kyiv National University, 6 Glushkova Av., Kyiv 252127, Ukraine), V.M.Loktev (Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine,14-b Metrologichna St., Kyiv 252143, Ukraine), A.B.Nadtochii, I.V.Ostrovskii (T.Shevchenko Kyiv National University, 6 Glushkova Av., Kyiv 252127, Ukraine), H.-G.Walter (Friedrich Schiller University, Institute for Optic and Quantum Electronics, 07743 Jena, Germany)

The sonoluminescence of ionic semiconductors is studied. The main attention is paid to threshold phenomena which accompany the light irradiation, namely, point defect creation and nonlinear ultrasound wave attenuation. The model for the description of processes under investigation which connects the sonoluminescence excitation with the onset of point defects (vacancies and interstitials) generation by the screw dislocation with a jog moved by ultrasound is proposed. An attempt is made to estimate the parameters of crystals which define the motion of the jog in its crystal relief.

Comments: Figs. 6, Refs. 16, Tabs. 0.